摘 要：瞬態(tài)電流（IDD）測試經(jīng)常被看作是靜態(tài)電流（IDDQ）測試的替代或補(bǔ)充，特別在深亞微米技術(shù)中，受到越來越多的關(guān)注。根據(jù)一種基于電荷的瞬態(tài)電流片外電流傳感器電路，并在其基礎(chǔ)上進(jìn)行改進(jìn)并對兩階多米諾加法器電路進(jìn)行仿真實(shí)驗(yàn)，實(shí)驗(yàn)結(jié)果表明，改進(jìn)后的電路能有效讀取集成電路中的瞬態(tài)電流，從而實(shí)現(xiàn)瞬態(tài)電流的測試。

關(guān)鍵詞：CMO集成電路；瞬態(tài)電流；有阻開路；測試技術(shù)

Off-chip ransient Current Monitor Circuit of CMO Integrated Circuit

LI Xiangjun，LI Chunming

(College of Information Engineering，Inner Mongolia University of echnology，uhhot，01001，China)

Abstract：ransient current testing(IDD) has been often cited as an alternative or supplement to IDDQ testing ，especially in deep-submicro technologies ，such test technique is noticed by more and more researchersAn off-chip and charge-based transient current monitor circuit is presentedOn the basis ofit，the circuits is improved and simulated for second Domino parallel circuits，experimental results show that the circuit can effectively sense transient current of integrated circuit and hence，perform transient current testing

Keywords：CMO integrated circuits;transient current;resistive open;test technology

隨著芯片特征尺寸的縮小和電路復(fù)雜程度的增加，有阻開路和有阻橋接缺陷的數(shù)目也在增加。同時，隨著器件密度、復(fù)雜性和時鐘速度的增加，邏輯測試技術(shù)已不能提供足夠的故障覆蓋率。為了彌補(bǔ)傳統(tǒng)測試方法的不足，基于靜態(tài)電流（IDDQ）的測試方法被廣泛使用。然而，隨著深亞微米技術(shù)時代的到來，總的靜態(tài)漏電流急劇增加，IDDQ測試技術(shù)受到嚴(yán)峻挑戰(zhàn)［1-3］，因此，需要尋找新的測試技術(shù)，而瞬態(tài)電流測試技術(shù)提供一個很好的替代或補(bǔ)充。這種測試方法能夠檢測傳統(tǒng)測試和IDDQ測試所不能檢測的缺陷［4］。