學(xué)報
- Performance Improvement of Blue InGaN Light-em itting Diode w ith A Special Designed Electron-blocking Layer
umin.(發(fā)光學(xué)報)，2012，33(12):1368-1372(in Chinese).［16］Zhao H，Liu G，Zhang J，et al.Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells［J］.Opt.Exp.，2011，19(4):A991-1007.［17］L
發(fā)光學(xué)報 2013年3期2013-08-13
- Effects of Experimental Conditions on The Morphology and Photocurrent Density of TiO2 Nanorods
umin.(發(fā)光學(xué)報)，2012，33(12):1329-1334(in Chinese).［3］Yang X，Qu Y，F(xiàn)an Y，et al.Y-branched TiO2nanotubes prepared by electrochemical anodization［J］.Chin.J.Lumin.(發(fā)光學(xué)報)，2012，33(3):269-274(in Chinese).［4］Xin X，Scheiner M，Ye M，et al.Surface
發(fā)光學(xué)報 2013年3期2013-08-13
- Effect of Channel Layer Thickness on The Device Characteristics of Room Temperature Fabricated In2O3Thin-film Transistors
umin.(發(fā)光學(xué)報)，2012，33(10):1149-1152(in Chinese).［3］Hsieh H H，Wu C C.Amorphous ZnO transparent thin-film transistors fabricated by fully lithographic and etching process［J］.Appl.Phys.Lett.，2007，91(1):013502-1-3.［4］Zhang H，Zhang L，Li
發(fā)光學(xué)報 2013年3期2013-03-02
- Field Em ission Characteristics of Single W all Carbon Nanotube Rope at The Presence of Dielectric M edium
umin.(發(fā)光學(xué)報)，2009，30(1):119-122(in Chinese).［13］Zang F H，Ding G F，Wang Y，et al.Characteristics of the three-dimensional trapezoidal electrodes for carbon nanotube field emitters［J］.Vacuum，2010，85(1):48-54.［14］Lin K C，Chen HW，Juan C
發(fā)光學(xué)報 2013年7期2013-03-02