2022年3期
刊物介紹
本學(xué)報(bào)是由中國(guó)電子學(xué)會(huì)主辦，中國(guó)科學(xué)院半導(dǎo)體研究所承辦的學(xué)術(shù)刊物，報(bào)道半導(dǎo)體物理學(xué)和半導(dǎo)體科學(xué)技術(shù)領(lǐng)域內(nèi)最新的科研成果和技術(shù)進(jìn)展，被EI、CA、SA等收錄，在中國(guó)科學(xué)院、國(guó)家科委、中共中央宣傳部和國(guó)家新聞出版署的期刊評(píng)比中多次獲獎(jiǎng)。主要欄目有：研究快報(bào)、研究論文、研究簡(jiǎn)報(bào)、技術(shù)進(jìn)展等。
Journal of Semiconductors
ARTICLES
- Fe3+-substitution effect on the thermal variation of J–E characteristics and DC resistivity of quadruple perovskite CaCu3Ti4O12
- Ultra wideband CMOS digital T-type attenuator with low phase errors
- An integrated front-end vertical hall magnetic sensor fabricated in 0.18 μm low-voltage CMOS technology
- T unable crystal structure of Cu–Zn–Sn–S nanocrystals for improving photocatalytic hydrogen evolution enabled by copper element regulation
- I nstability of parasitic capacitance in T-shape-gate enhancementmode AlGaN/GaN MIS-HEMTs
- Structural, optical and antimicrobial properties of pure and Agdoped ZnO nanostructures
- Modelling and fabrication of wide temperature range Al0.24Ga0.76As/GaAs Hall magnetic sensors
- Performance enhancement of solution-processed InZnO thin-film transistors by Al doping and surface passivation